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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 26 i d @ v gs = 12v, t c = 100c continuous drain current 16 i dm pulsed drain current 104 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 26 a e ar repetitive avalanche energy 15 mj dv/dt peak d iode recovery dv/dt 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 8.0 (typical) g pre-irradiation international rectifiers radhard hexfet ? technology provides high performance power mosfets forspace applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened 200v, n-channelpower mosfet rad hard ? hexfet ? technology surface mount (to-254aa tabless) www.irf.com 1 product summary part number radiation level r ds(on) i d irhmj7250 100k rads (si) 0.10 ? 26a IRHMJ3250 300k rads (si) 0.10 ? 26a irhmj4250 600k rads (si) 0.10 ? 26a irhmj8250 1000k rads (si) 0.10 ? 26a features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic eyelets light weight for footnotes refer to the last page to-254aa tabless irhmj7250 pd-96914 downloaded from: http:///
2 www.irf.com irhmj7250 pre-irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.27 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.10 v gs = 12v, i d = 16a on-state resistance 0.11 ? v gs = 12v, i d = 26a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 s ( )v ds > 15v, i ds = 16a i dss zero gate voltage drain current 25 v ds = 160v,v gs =0v 250 v ds = 160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 170 v gs = 12v, i d = 26a q gs gate-to-source charge 30 nc v ds = 100v q gd gate-to-drain (miller) charge 60 t d (on) turn-on delay time 33 v dd = 100v, i d = 26a, t r rise time 140 v gs = 12v, r g = 2.35 ? t d (off) turn-off delay time 140 t f fall time 140 l s + l d total inductance 6.8 c iss input capacitance 4700 v gs = 0v, v ds = 25v c oss output capacitance 850 p f f = 1.0mhz c rss reverse transfer capacitance 210 na ? nh ns a note: corresponding spice and saber models are available on international rectifier website.for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.83 r thcs case-to-sink 0.21 r thja junction-to-ambient 48 typi cal socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 26 i sm pulse source current (body diode) 104 v sd diode forward voltage 1.4 v t j = 25c, i s = 26a, v gs = 0v t rr reverse recovery time 820 ns t j = 25c, i f = 26a, di/dt 100a/ s q rr reverse recovery charge 12 c v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from drain lead (6mm/0.25in. frompackage) to source lead (6mm/0.25in. from package) downloaded from: http:///
www.irf.com 3 pre-irradiation irhmj7250 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =160v, v gs =0v r ds(on) static drain-to-source 0.094 0.149 ? v gs = 12v, i d =16a on-state resistance (to-3) r ds(on) static drain-to-source 0.10 0.155 ? v gs = 12v, i d =16a on-state resistance (to-254aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhmj7250, IRHMJ3250 and irhmj42502. part number irhmj8250 fig a. single event effect, safe operating area v sd diode forward voltage 1.4 1.4 v v gs = 0v, i s = 26a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 0 50 100 150 200 0- 5- 1 0- 1 5- 2 0 vgs vds cu br table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 190 180 170 125 br 36.8 305 39 100 100 100 50 downloaded from: http:///
4 www.irf.com irhmj7250 pre-irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure downloaded from: http:///
www.irf.com 5 pre-irradiation irhmj7250 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation downloaded from: http:///
6 www.irf.com irhmj7250 pre-irradiation post-irradiation radiation characteristics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads(si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc downloaded from: http:///
www.irf.com 7 pre-irradiation irhmj7250 radiation characteristics fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads(si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc downloaded from: http:///
8 www.irf.com irhmj7250 pre-irradiation fig 21. normalized on-resistance vs. temperature fig 19. typical output characteristics fig 18. typical output characteristics fig 20. typical transfer characteristics downloaded from: http:///
www.irf.com 9 pre-irradiation irhmj7250 fig 25. maximum safe operating area fig 23. typical gate charge vs. gate-to-source voltage fig 22. typical capacitancevs. drain-to-source voltage fig 24. typical source-drain diode forward voltage downloaded from: http:///
10 www.irf.com irhmj7250 pre-irradiation fig 26a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 26b. switching time waveforms fig 27. maximum effective transient thermal impedance, junction-to-case fig 26. maximum drain current vs. case temperature
1 0.1 %
+ - v gs downloaded from: http:///
www.irf.com 11 pre-irradiation irhmj7250 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 29b. gate charge test circuit fig 29a. basic gate charge waveform fig 28c. maximum avalanche energy vs. drain current fig 28b. unclamped inductive waveforms fig 28a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:///
12 www.irf.com irhmj7250 pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 1.5mh peak i l = 26a, v gs = 12v i sd 26a, di/dt 190a/ s, v dd 200v, t j 150c case outline and dimensions to-254aa tabless foot notes: caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 1. dimens ioning & tolerancing per as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 4. t his out line is a modif ied t o-254aa jedec out line. 3. cont rol ling dime ns ion: inch. not es : pin assignments 1 = drain 2 = source 3 = gate ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2004 downloaded from: http:///

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